Breakdown Phenomena in Semiconductors and Semiconductor DevicesWorld Scientific, 2005 - 208 頁 Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis. |
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A/cm² act of impact amplitude anode approximation Auger recombination avalanche breakdown avalanche photodiodes avalanche region avalanche transistor base bias breakdown field breakdown voltage calculated channel characteristic field circuit cm/s coefficient collector voltage corresponds current-voltage characteristic curve decreases dependence differential resistance diffusion doping level drift velocity dV/dt ramp effect electric field Electron Devices electrons and holes emission emitter energy experimental field distribution field F Figure free carriers frequency GaAs thyristors Gunn Gunn diodes high current densities impact ionization impact ionization front IMPATT diode increases ionization rates Journ kV/cm leakage current length Levinshtein magnitude maximum microplasma multiplication factor operation Phys plane ionization front pn junction pulse qualitative regime residual voltage reverse-biased sample saturation Schottky diodes semiconductor devices shown in Fig Shur silicon simulations space-charge region structure superfast switching temperature thyristor V/cm V₁ voltage drop εεο